FILMS OF A-SI-H DOPED WITH ERBIUM FROM THE METALORGANIC COMPOUND ER(HFA)(3)ASTERISK-DME, EMITTING AT 1.54 MU-M

For the first time standard low-temperature (<300 degrees C) plasma-en hanced chemical vapor deposition technology has been used to obtain a- Si(Er):H films emitting at 1.54 mu m at room temperature. The fluorine -containing metalorganic compound Er(HFA)(3)DME, exhibiting enhanced volatility and fairly good thermal stability, was used for the first t ime as the Er source. The establishment of photoconduction in the synt hesized samples indicates that they are of satisfactory electronic qua lity and potentially useful for developing light-emitting diodes at 1. 54 mu m. (C) 1998 American Institute of Physics.