INTERFACIAL DISLOCATIONS AT THE JUNCTION LINES OF (211)MICROFACETS OFA TWIN BOUNDARY IN SILICON

A faceted {211}-{211}, Sigma = 3 twin boundary in polycrystalline sili con has been observed for the first time by transmission electron micr oscopy. The facets are crystallographically equivalent regions of inte rface and the boundary exhibits dislocations along the facet junction lines. The defects were characterized a priori using the topological t heory of line defects in interfaces. This analysis predicts the releva nt geometrically necessary defects. The dislocations were imaged in da rkfield conditions using common reflections which were weak in intensi ty. Image simulation was employed for the purpose of comparison with t he theoretical predictions, and good agreement was achieved.