BORON-DIFFUSION IN TASI2 THIN-FILMS

Boron diffusion in TaSi2 thin films was measured by Secondary Ion Mass Spectrometry (SIMS). Tantalum and silicon were deposited on a (100) s ilicon wafer in a nominal ratio of 1:2 by co-sputtering followed by si ntering at 950 degrees C for 3 h. The diffusion anneals were performed in the temperature range of 579 to 795 degrees C. The temperature dep endence of D for lattice diffusion is given by D = 6.31 x 10(-11) exp (-1.09 eV/kT) cm(2)/s. On the basis of the observed activation energy and the low value of the pre-exponential factor a kick-out diffusion m echanism is suggested.