THEORETICAL DESCRIPTION OF HIGH-TEMPERATURE IMPLANTATION OF SILICON-CARBIDE WITH N+ AND AL+ IONS

A theoretical analysis is made of the evolution of the defect structur e in silicon carbide (6H-SiC) implanted with N+ and Al+ ions of variou s energies. Satisfactory agreement was achieved between the calculated defect distributions and the experimental data. The following kinetic parameters of silicon carbide were estimated numerically: the migrati on energy of interstitial silicon atoms and the recombination paramete rs of vacancies and interstitial sites in the carbon and silicon subsy stems. (C) 1998 American Institute of Physics. [S1063-7850(98)00l701-0 ].