LOW-THRESHOLD QUANTUM-DOT INJECTION HETEROLASER EMITTING AT 1.84 MU-M

Authors
USTINOV VM KOVSH AR ZHUKOV AE EGOROV AY LEDENTSOV NN LUNEV AV SHERNYAKOV YM MAKSIMOV MV TSATSULNIKOV AF VOLOVIK BV KOPEV PS ALFEROV ZI
Citation
Vm. Ustinov et al., LOW-THRESHOLD QUANTUM-DOT INJECTION HETEROLASER EMITTING AT 1.84 MU-M, Technical physics letters, 24(1), 1998, pp. 22-23
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
24
Issue
1
Year of publication
1998
Pages
22 - 23
Database
ISI
SICI code
1063-7850(1998)24:1<22:LQIHEA>2.0.ZU;2-F
Abstract
The use of InAs quantum dots in an InGaAs matrix lattice-matched with an InP substrate can appreciably increase the emission wavelength of q uantum-dot lasers. Lasing via quantum-dot states at the 1.84 mu m wave length (77 K) was obtained for the first time at a threshold current d ensity of 64 A/cm(2). (C) 1998 American Institute of Physics. [S1063-7 850(98)00901-X].