ACTIVATION-ENERGY FOR THE FORMATION OF OXYGEN VACANCIES IN UNDOPED NONSTOICHIOMETRIC INDIUM OXIDE-FILMS

Authors
ORLOV AM KOSTISHKO BM GONCHAR LI
Citation
Am. Orlov et al., ACTIVATION-ENERGY FOR THE FORMATION OF OXYGEN VACANCIES IN UNDOPED NONSTOICHIOMETRIC INDIUM OXIDE-FILMS, Technical physics letters, 24(2), 1998, pp. 81-82
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
24
Issue
2
Year of publication
1998
Pages
81 - 82
Database
ISI
SICI code
1063-7850(1998)24:2<81:AFTFOO>2.0.ZU;2-J
Abstract
An analysis is made of the temperature dependence of the electrical co nductivity of undoped nonstoichiometric indium oxide films. Activation energies are obtained for the formation of oxygen vacancies and for t he mobility of quasifree carriers. (C) 1998 American Institute of Phys ics. [S1063-7850(98)00102-5].