DIRECT BONDING OF SILICON-WAFERS WITH A DIFFUSION LAYER

Authors
VORONKOV VB GUK EG KOZLOV VA SHUMAN VB
Citation
Vb. Voronkov et al., DIRECT BONDING OF SILICON-WAFERS WITH A DIFFUSION LAYER, Technical physics letters, 24(3), 1998, pp. 207-208
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
24
Issue
3
Year of publication
1998
Pages
207 - 208
Database
ISI
SICI code
1063-7850(1998)24:3<207:DBOSWA>2.0.ZU;2-2
Abstract
The possibility of solid-phase direct bonding of silicon wafers having p(+)- or n(+)-type diffusion layers with a high surface dopant concen tration has been demonstrated for the first time. (C) 1998 American In stitute of Physics. [S1063-7850(98)01803-5]