LONG-WAVELENGTH UNCOOLED SOURCES OF LAMBDA=5-6 MU-M RADIATION USING GRADED-INDEX INASSB(P) LAYERS GROWN BY LIQUID-PHASE EPITAXY

Authors
AIDARALIEV M ZOTOVA NV KARANDASHEV SA MATVEEV BA REMENNYI MA STUS NM TALALAKIN GN
Citation
M. Aidaraliev et al., LONG-WAVELENGTH UNCOOLED SOURCES OF LAMBDA=5-6 MU-M RADIATION USING GRADED-INDEX INASSB(P) LAYERS GROWN BY LIQUID-PHASE EPITAXY, Technical physics letters, 24(3), 1998, pp. 243-245
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
24
Issue
3
Year of publication
1998
Pages
243 - 245
Database
ISI
SICI code
1063-7850(1998)24:3<243:LUSOLM>2.0.ZU;2-N
Abstract
Graded-index p-n InAsSb/InAsSbP/InAs structures capable of emitting at the maximum of the spectral curve up to 5.4 mu m with a half-width of similar to 26 meV (similar to 0.6 mu m) without cooling have been fab ricated and studied. This is the longest-wavelength radiation obtained at room temperature in III-V structures grown by liquid-phase epitaxy and the band is the narrowest obtained for semiconductor spontaneous radiation sources. (C) 1998 American Institute of Physics. [S1063-7850 (98)03403-X].