INTERRELATION BETWEEN THE RESISTANCE OF GUNN-DIODES IN WEAK ELECTRIC-FIELDS AND THE CHARACTERISTICS OF OSCILLATORS BASED ON THEM

Authors
USANOV DA SKRIPAL AV BABAYAN AV
Citation
Da. Usanov et al., INTERRELATION BETWEEN THE RESISTANCE OF GUNN-DIODES IN WEAK ELECTRIC-FIELDS AND THE CHARACTERISTICS OF OSCILLATORS BASED ON THEM, Technical physics letters, 24(5), 1998, pp. 371-373
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
24
Issue
5
Year of publication
1998
Pages
371 - 373
Database
ISI
SICI code
1063-7850(1998)24:5<371:IBTROG>2.0.ZU;2-4
Abstract
A theoretical description is given of an experimentally established de pendence which determines the interrelation between the resistance of a semiconductor structure in weak electric fields and the characterist ics of Gunn oscillators. This experimentally established dependence is of considerable practical value since it can be used to predict the m ain characteristics of diode microwave oscillators using easily measur ed parameters of de diodes. (C) 1998 American Institute of Physics. [S 1063-7850(98)01805-9].