INFLUENCE OF A METHANE ATMOSPHERE ON THE TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF POLYCRYSTALLINE SILICON FILMS

Authors
SHABANOV VN SHENGUROV DV
Citation
Vn. Shabanov et Dv. Shengurov, INFLUENCE OF A METHANE ATMOSPHERE ON THE TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF POLYCRYSTALLINE SILICON FILMS, Technical physics letters, 24(5), 1998, pp. 377-378
Citations number
4
Categorie Soggetti
Physics, Applied
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
24
Issue
5
Year of publication
1998
Pages
377 - 378
Database
ISI
SICI code
1063-7850(1998)24:5<377:IOAMAO>2.0.ZU;2-K
Abstract
The possibility of using polycrystalline silicon films in gas sensors is investigated. An analysis is made of the influence of a small quant ity of methane admitted into the surrounding medium on the temperature dependence of the layer resistivity of films doped with acceptor impu rities. It is established that the resistivity increases appreciably i n the temperature range between 470 and 500 degrees. (C) 1998 American Institute of Physics. [S1063-7850(98)02005-9].