LASER IMPLANTATION OF IMPURITIES IN CADMIUM TELLURIDE CRYSTALS

Processes of laser implantation of shallow donors (aluminum and indium ) and an acceptor (antimony) in CdTe crystals (n,p similar to 10(15) c m(-3)) are investigated. Thin dopant films vacuum deposited on the etc hed surface of the crystals are irradiated by ruby (lambda = 0.694 mu m) and Nd:YAG (lambda = 1.06 mu m) laser pulses (pulse duration 20 ns) over a wide energy interval (0.1-1.8 J/cm(2)). The irradiated surface s are studied by x-ray microanalysis, Auger spectroscopy, and the ther mopower method. It is it is shown that irradiation by a Nd:YAG laser p roduces a uniform doping of a subsurface layer of the crystal by alumi num. The implantation of indium leads to the formation of a precipitat e. The concentration of implanted impurities reaches 10(19)-10(21) cm( -3) (C) 1998 American Institute of Physics. [S1063-7850(98)00106-2]