Highly transparent conductive indium oxide (In2O3) thin films were pre
pared by DC magnetron sputtering using a pure indium oxide target in a
n argon atmosphere. A linear programming method for the production des
ign of these thin films using a sputtering process was proposed. Sputt
ering model calculations were founded on the 'random partial sections
in a multi-factor's space' theory. The obtained model was further opti
mized by the 'precipitous rise' method in order to obtain optimal proc
essing parameters. The chosen active factors of the sputtering process
(independent of each other) were: argon pressure; substrate temperatu
re; target voltage; and deposition duration. As a result of the optimi
zation process, the obtained transparent conductive indium oxide thin
films had the following parameters: transparency in 550 nm-90.7% (incl
uding the glass substrate having an absolute transparency of 91.08%);
resistivity of up to 0.043 Omega cm for a 2500 Angstrom film thickness
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