DEEP ENERGY-LEVELS IN POWER DIODES INTRODUCED BY IRIDIUM DIFFUSION

The results of a study carried out on N-type silicon and P+PNN+ silico n diodes diffused with iridium at temperatures ranging from 820 to 940 degrees C are reported. The iridium-related deep energy levels were m easured using DLTS method. The energy levels E-c = 0.16, 0.28 and 0.54 eV were found, the dominant recombination centre is of energy E-c - 0 .28 eV. Besides the energy levels, the influence of iridium diffusion on carrier lifetime and basic parameters of the diode structures was s tudied. It was found that iridium diffusion may be used successfully f or the fabrication of fast, soft reverse recovery power diodes. (C) 19 98 Elsevier Science Ltd. All rights reserved.