THE SIH4-]SIH3+H-2 REACTION - POTENTIAL-ENERGY SURFACE, RATE CONSTANTS, AND KINETIC ISOTOPE EFFECTS(H)

Citation
J. Espinosagarcia et al., THE SIH4-]SIH3+H-2 REACTION - POTENTIAL-ENERGY SURFACE, RATE CONSTANTS, AND KINETIC ISOTOPE EFFECTS(H), The Journal of chemical physics, 109(2), 1998, pp. 466-473
Citations number
44
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
ISSN journal
00219606
Volume
109
Issue
2
Year of publication
1998
Pages
466 - 473
Database
ISI
SICI code
0021-9606(1998)109:2<466:TSR-PS>2.0.ZU;2-F
Abstract
The potential energy surface for the gas-phase SiH4+K-->SiH3+H-2 react ion and its deuterated analogs was constructed with suitable functiona l forms to represent the stretching and bending modes, and using as ca libration criterion the reactant and product experimental properties a nd the ab initio saddle point properties. Using this surface, the rate constants were calculated with variational transition-state theory ov er the temperature range 200-1000 K, finding good agreement with exper iments. We also provide a detailed analysis of the kinetic isotope eff ects and a comparison with the scarce experimental results. (C) 1998 A merican Institute of Physics.