J. Espinosagarcia et al., THE SIH4-]SIH3+H-2 REACTION - POTENTIAL-ENERGY SURFACE, RATE CONSTANTS, AND KINETIC ISOTOPE EFFECTS(H), The Journal of chemical physics, 109(2), 1998, pp. 466-473
The potential energy surface for the gas-phase SiH4+K-->SiH3+H-2 react
ion and its deuterated analogs was constructed with suitable functiona
l forms to represent the stretching and bending modes, and using as ca
libration criterion the reactant and product experimental properties a
nd the ab initio saddle point properties. Using this surface, the rate
constants were calculated with variational transition-state theory ov
er the temperature range 200-1000 K, finding good agreement with exper
iments. We also provide a detailed analysis of the kinetic isotope eff
ects and a comparison with the scarce experimental results. (C) 1998 A
merican Institute of Physics.