We have examined the effect of thermally induced interdiffusion on the
luminescence emission from red and infrared emitting self-assembled I
II-V quantum dots. Three different combinations of dot/barrier materia
ls have been investigated: InAlAs/AlGaAs, InGaAs/AlGaAs and InGaAs/GaA
s. In all cases, thermal intermixing was found to result in significan
t blueshifts of the photoluminescence (PL) emission. in addition, narr
owing of the linewidth of the inhomogeneously broadened PL peak was ob
served, Both effects were found to be strongly dependent on the materi
al system and average dot size. InAlAs/AlGaAs quantum dots exhibited t
he greatest linewidth reduction after intermixing, indicating this to
be a promising method of achieving narrower luminescence lines for dev
ices such as red-emitting zero-dimensional lasers. (C) 1998 American I
nstitute of Physics.