HOT-CARRIER-INDUCED PICOSECOND DYNAMICS OF A VERTICAL-CAVITY SURFACE-EMITTING LASER - INFLUENCE OF TRANSVERSE EFFECTS

Citation
Od. Mucke et M. Wegener, HOT-CARRIER-INDUCED PICOSECOND DYNAMICS OF A VERTICAL-CAVITY SURFACE-EMITTING LASER - INFLUENCE OF TRANSVERSE EFFECTS, Applied physics letters, 73(5), 1998, pp. 569-571
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
73
Issue
5
Year of publication
1998
Pages
569 - 571
Database
ISI
SICI code
0003-6951(1998)73:5<569:HPDOAV>2.0.ZU;2-I
Abstract
The interplay of carrier heating effects and transverse variations of the carrier distribution functions has a significant influence on the ultrafast emission dynamics of semiconductor vertical cavity surface e mitting lasers. This interplay can lead to dynamic overshooting and os cillations (here at 200 GHz) even for lasing on a single transverse an d single longitudinal mode. A simple equivalent model is a cavity cont aining the gain medium and a saturable absorber. The numerical results can directly be compared with recently published experiments. (C) 199 8 American Institute of Physics.