ANALYSIS OF TERRACE SIZE FLUCTUATIONS OF B-INDUCED STRIPE STRUCTURES ON THE SI(001) SURFACE

Terrace size fluctuations of B-induced stripe structures on Si (001) w ere analyzed by using scanning tunneling microscopy. The terrace size was varied independently of the substrate temperature by supplying dib orane (B2H6) Histograms of the terrace size were fitted by Gaussian di stributions and the standard deviation was proportional to the square root of the mean terrace size. These results indicate that the B-induc ed stripe structures arise from the competition between the stress ani sotropy and step energy on Si (001), and mean that the surface anisotr opy is almost independent of the B concentration. (C) 1998 American In stitute of Physics.