SURFACE PHOTOVOLTAGE SPECTROSCOPY OF A GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR/

Authors
MISHORI B LEIBOVITCH M SHAPIRA Y POLLAK FH STREIT DC WOJTOWICZ M
Citation
B. Mishori et al., SURFACE PHOTOVOLTAGE SPECTROSCOPY OF A GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR/, Applied physics letters, 73(5), 1998, pp. 650-652
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
5
Year of publication
1998
Pages
650 - 652
Database
ISI
SICI code
0003-6951(1998)73:5<650:SPSOAG>2.0.ZU;2-B
Abstract
The electronic properties of a GaAs/AlGaAs heterojunction bipolar tran sistor (HBT) structure have been studied by surface photovoltage spect roscopy. The p-base band-gap narrowing has been determined and confirm ed by numerical simulation. Based on the shape of the surface photovol tage spectrum, it is possible to monitor the doping level and evaluate the minority-carrier mobility. This work; demonstrates the power of t he technique as a precision tool for HBT quality control. (C) 1998 Ame rican Institute of Physics.