PERMITTIVITY OF GAAS EPILAYERS CONTAINING ARSENIC PRECIPITATES

The real part of the permittivity of annealed low temperature grown ga llium arsenide (LTG GaAs) has been measured via capacitance measuremen ts taken on p-i-n devices. The intrinsic region of the devices contain ed LTG GaAs annealed at 700? 800, and 900 degrees C for 30 s. The capa citance trends as a function of frequency for the annealed LTG GaAs sa mples were compared to that of GaAs grown at a standard substrate temp erature. An increased screening of the electric field was observed for the LTG samples as the test frequency was lowered. The capacitance me asurements were taken at various test temperatures, enabling the compu tation of an activation energy of the electric field screening in the annealed LTG GaAs from Arrhenius plots. (C) 1998 American Institute of Physics. [S0003-6951(98)04631-2].