MAGNETORESISTANCE OF FERROMAGNETIC TUNNEL-JUNCTIONS WITH AL2O3 BARRIERS FORMED BY RF SPUTTER ETCHING IN AR O-2 PLASMA/

Authors
NASSAR J HEHN M VAURES A PETROFF F FERT A
Citation
J. Nassar et al., MAGNETORESISTANCE OF FERROMAGNETIC TUNNEL-JUNCTIONS WITH AL2O3 BARRIERS FORMED BY RF SPUTTER ETCHING IN AR O-2 PLASMA/, Applied physics letters, 73(5), 1998, pp. 698-700
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
5
Year of publication
1998
Pages
698 - 700
Database
ISI
SICI code
0003-6951(1998)73:5<698:MOFTWA>2.0.ZU;2-V
Abstract
Co/Al2O3/Ni80Fe20 tunnel junctions were grown by sputtering at room te mperature on glass and Si substrates, the barrier being formed by rf s putter etching of aluminum in a Ar/O-2 plasma. The resistance is contr olled for a given junction area by adjusting the oxide barrier thickne ss. Magnetoresistance ratios of 16% at 4.2 K and 6% at room temperatur e are obtained with good reproducibility over three orders of magnitud e of resistance. Effects related to substrate shunting and oxidation o f the bottom Co electrode are discussed. (C) 1998 American Institute o f Physics. [S0003-6951(98)04031-5].