J. Wu et al., METALORGANIC VAPOR-PHASE EPITAXY GROWTH AND PHOTOLUMINESCENCE PROPERTIES OF CUBIC ALXGA1-XN, Applied physics letters, 73(2), 1998, pp. 193-195
We have grown cubic AlxGa1-xN (0<x<0.25) films on GaAs (100) substrate
s by metalorganic vapor phase epitaxy. A strong excitonic transition,
as well as a donor-acceptor pair transition and a deep-level emission,
was observed in the photoluminescence spectra at 5 K in all the sampl
es. With increasing Al fraction, all the emission lines shift to highe
r energy, nevertheless, with different shift rates. The temperature-de
pendent photoluminescence spectra show that the behavior of the donor-
acceptor pair transition varied with Al fraction; at higher Al concent
rations, the donor-acceptor pair transition tends to transform to a fr
ee-electron to acceptor transition and survive even at room temperatur
e. This can also explain the energy shift to higher energy with increa
sing temperature for this emission line. (C) 1998 American Institute o
f Physics.