METALORGANIC VAPOR-PHASE EPITAXY GROWTH AND PHOTOLUMINESCENCE PROPERTIES OF CUBIC ALXGA1-XN

Citation
J. Wu et al., METALORGANIC VAPOR-PHASE EPITAXY GROWTH AND PHOTOLUMINESCENCE PROPERTIES OF CUBIC ALXGA1-XN, Applied physics letters, 73(2), 1998, pp. 193-195
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
73
Issue
2
Year of publication
1998
Pages
193 - 195
Database
ISI
SICI code
0003-6951(1998)73:2<193:MVEGAP>2.0.ZU;2-3
Abstract
We have grown cubic AlxGa1-xN (0<x<0.25) films on GaAs (100) substrate s by metalorganic vapor phase epitaxy. A strong excitonic transition, as well as a donor-acceptor pair transition and a deep-level emission, was observed in the photoluminescence spectra at 5 K in all the sampl es. With increasing Al fraction, all the emission lines shift to highe r energy, nevertheless, with different shift rates. The temperature-de pendent photoluminescence spectra show that the behavior of the donor- acceptor pair transition varied with Al fraction; at higher Al concent rations, the donor-acceptor pair transition tends to transform to a fr ee-electron to acceptor transition and survive even at room temperatur e. This can also explain the energy shift to higher energy with increa sing temperature for this emission line. (C) 1998 American Institute o f Physics.