OPTICAL GAIN IN GAN EPILAYERS

Authors
HESS S TAYLOR RA RYAN JF BEAUMONT B GIBART P
Citation
S. Hess et al., OPTICAL GAIN IN GAN EPILAYERS, Applied physics letters, 73(2), 1998, pp. 199-201
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
2
Year of publication
1998
Pages
199 - 201
Database
ISI
SICI code
0003-6951(1998)73:2<199:>2.0.ZU;2-0
Abstract
We present optical gain and loss spectra measured over a range of carr ier densities at low temperature in hexagonal GaN epilayers. We have d etermined the optical loss directly to be similar to 80 cm(-1). Photol uminescence spectra show that stimulated emission in our samples arise s from electron-hole plasma recombination. (C) 1998 American Institute of Physics.