Js. Nelson et al., VALENCE AND ATOMIC SIZE-DEPENDENT EXCHANGE BARRIERS IN VACANCY-MEDIATED DOPANT DIFFUSION, Applied physics letters, 73(2), 1998, pp. 247-249
First-principles pseudopotential calculations of dopant-vacancy exchan
ge barriers indicate a strong dependency on dopant valence and atomic
size, in contrast to current models of vacancy-mediated dopant diffusi
on, First-row elements (B, C, N) are found to have exchange barriers w
hich are an order of magnitude larger than the assumed value of 0.3 eV
(the Si vacancy migration energy), (C) 1998 American Institute of Phy
sics. [S0003-6951 (98)04128-X].