DIRECT ASSESSMENT OF TUNABLE SCHOTTKY BARRIERS BY INTERNAL PHOTOEMISSION SPECTROSCOPY

Authors
GIGLI G LOMASCOLO M DEVITTORIO M CINGOLANI R COLA A QUARANTA F SORBA L MUELLER B FRANCIOSI A
Citation
G. Gigli et al., DIRECT ASSESSMENT OF TUNABLE SCHOTTKY BARRIERS BY INTERNAL PHOTOEMISSION SPECTROSCOPY, Applied physics letters, 73(2), 1998, pp. 259-261
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
73
Issue
2
Year of publication
1998
Pages
259 - 261
Database
ISI
SICI code
0003-6951(1998)73:2<259:DAOTSB>2.0.ZU;2-I
Abstract
Al/GaAs(001) junctions in which the Schottky barrier was tuned through fabrication of a pseudomorphic Si interface layer were characterized by internal photoemission spectroscopy. Well-defined photoabsorption o nsets corresponding to Schottky barrier heights ranging from 0.3 to 1. 1 eV were observed in different devices. Our results point to the poss ible exploitation of tunable Schottky barriers in metal/semiconductor and metal/semiconductor/metal photon detectors. (C) 1998 American Inst itute of Physics. [S0003-6951(98)04428-3].