SELF-REGULATED GROWTH OF TILTED SUPERLATTICES BY ATOMIC LAYER EPITAXY

We report on a self-regulated method for the growth of tilted superlat tices. It relies on the reconstructed surfaces alternatively stabilize d during the atomic layer epitaxy (ALE) of compound semiconductors. Th e c(2X2)+(2X1) Cd-stabilized and the (2X1) Te-stabilized surfaces alte rnatively formed during the ALE of CdTe and CdMn(Mg)Te ensure a self-r egulation of the growth at 0.5 monolayer deposited per ALE cycle for b oth CdTe and CdMn(Mg)Te. We are thus able to overcome the problem of p recise flux control inherent to tilted superlattices. (C) 1998 America n Institute of Physics.