RELAXED GE0.9SI0.1 ALLOY LAYERS WITH LOW THREADING DISLOCATION DENSITIES GROWN ON LOW-TEMPERATURE SI BUFFERS

Authors
PENG CS ZHAO ZY CHEN H LI JH LI YK GUO LW DAI DY HUANG Q ZHOU JM ZHANG YH SHENG TT TUNG CH
Citation
Cs. Peng et al., RELAXED GE0.9SI0.1 ALLOY LAYERS WITH LOW THREADING DISLOCATION DENSITIES GROWN ON LOW-TEMPERATURE SI BUFFERS, Applied physics letters, 72(24), 1998, pp. 3160-3162
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
24
Year of publication
1998
Pages
3160 - 3162
Database
ISI
SICI code
0003-6951(1998)72:24<3160:RGALWL>2.0.ZU;2-C
Abstract
Relaxed GexSi1-x epilayers with high Ge fractions but low threading di slocation densities have been successfully grown on Si (001) substrate by employing a stepped-up strategy and a set of low-temperature GeySi 1-y buffers. We show that even if the Ge fraction rises up to 90%, the threading dislocation density can be kept lower than 5X10(6) cm(-2) i n the top layers, while the total thickness of the structure is no mor e than 1.7 mu m. (C) 1998 American Institute of Physics.