ELECTRONIC AND TRANSFORMATION PROPERTIES OF A METASTABLE DEFECT INTRODUCED IN EPITAXIALLY GROWN BORON-DOPED P-TYPE SI BY ALPHA-PARTICLE IRRADIATION

Titanium (Ti) Schottky barrier diodes on epitaxially grown boron-doped p-type Si films with a free carrier density of 6-8 x 10(16) cm(-3) we re irradiated with alpha particles at room temperature using an americ ium-241 (Am-241) radio nuclide. We report the electronic and transform ation characteristics of an alpha-particle irradiation-induced defect H alpha 2 in epitaxially grown p-Si with metastable properties. The en ergy level and apparent capture cross section, as determined by deep-l evel transient spectroscopy, are E-upsilon + 0.43 eV and 1.4 x 10(-15) cm(2), respectively. This defect can be removed and re-introduced usi ng a conventional bias-on/off cooling technique. (C) 1998 American Ins titute of Physics.