EXCITONS AND EXCITONIC COMPLEXES IN GAAS ALGAAS QUANTUM-WELLS WITH A LOW-DENSITY QUASI-2-DIMENSIONAL ELECTRON AND HOLE CHANNEL/

Citation
Ov. Volkov et al., EXCITONS AND EXCITONIC COMPLEXES IN GAAS ALGAAS QUANTUM-WELLS WITH A LOW-DENSITY QUASI-2-DIMENSIONAL ELECTRON AND HOLE CHANNEL/, JETP letters, 67(9), 1998, pp. 744-750
Citations number
8
Categorie Soggetti
Physics
Journal title
ISSN journal
00213640
Volume
67
Issue
9
Year of publication
1998
Pages
744 - 750
Database
ISI
SICI code
0021-3640(1998)67:9<744:EAECIG>2.0.ZU;2-E
Abstract
The recombination spectra of excitons and excitonic complexes in undop ed GaAs/AlGaAs single quantum wells are investigated. It is shown on t he basis of a study of the magnetic-field dependence of the emission s pectra and the degree of optical orientation in zero magnetic field an d on the basis of electrooptic measurements that not only the density but also the sign of the charge carriers in a well depend strongly on the photoexcitation energy. It is shown on the basis of a comparative analysis of the spin splitting of the recombination lines of free and bound excitons that the recombination line which was attributed earlie r to a positively charged exciton corresponds to the recombination of an exciton bound on a neutral acceptor. (C) 1998 American Institute of Physics. [S0021-3640(98)01909-4].