ELECTRICAL CHARACTERIZATION OF HE-PLASMA PROCESSED N-GAAS

We employed capacitance-voltage (C-V) measurements to determine the fr ee-carrier concentration changes in n-GaAs after processing it in a He plasma, and deep-level transient spectroscopy (DLTS) to study the ele ctrical properties of the plasma-induced defects. C-V measurements ind icated that He-plasma processing resulted in a strong carrier reductio n up to 1 mu m below the GaAs surface. DLTS showed that He-ion process ing introduced several prominent defects, including the frequently stu died radiation-induced defects E1 and E2, associated with V-As. Curren t-voltage measurements demonstrated that the He-plasma processing inhi bits the fabrication of high barrier Schottky diodes on n-GaAs. (C) 19 98 American Institute of Physics. [S0021-8979(98)09916-2].