DETERMINING 4H SILICON-CARBIDE ELECTRONIC-PROPERTIES THROUGH COMBINEDUSE OF DEVICE SIMULATION AND METAL-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR TERMINAL CHARACTERISTICS

A two-dimensional numerical device simulator has been developed specia lly for the recessed gate 4H silicon carbide(4H-SiC) metal-semiconduct or field-effect-transistor (MESFET). By combining numerical techniques , material physics, and measured device characteristics, we are able t o use the simulator to extract more information about the new material 4H-SiC, including the mobility, velocity-field curves, and the Schott ky barrier height. We have also enabled and used the new simulator to investigate breakdown voltage and thus predict operation limitations o f the 4H-SiC device. Simulations indicate that impact ionization is re latively small in 4H-SiC, thereby leading to a very high breakdown vol tage of 125 V in a 0.7 mu m gate MESFET. (C) 1998 American Institute o f Physics. [S0021-8979(98)06516-5].