THE ROLE OF THE TUNNELING COMPONENT IN THE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-GAN SCHOTTKY DIODES

Authors
YU LS LIU QZ XING QJ QIAO DJ LAU SS REDWING J
Citation
Ls. Yu et al., THE ROLE OF THE TUNNELING COMPONENT IN THE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-GAN SCHOTTKY DIODES, Journal of applied physics, 84(4), 1998, pp. 2099-2104
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
84
Issue
4
Year of publication
1998
Pages
2099 - 2104
Database
ISI
SICI code
0021-8979(1998)84:4<2099:TROTTC>2.0.ZU;2-O
Abstract
The temperature dependence of the current-voltage characteristics of N i-GaN Schottky barriers have been measured and analyzed. It was found that the enhanced tunneling component in the transport current of meta l-GaN Schottky barrier contacts is a likely explanation for the large scatter in the measured Richardson constant. (C) 1998 American Institu te of Physics. [S0021-8979(98)01316-4].