RISE-TIME OF ELECTROLUMINESCENCE FROM BILAYER LIGHT-EMITTING-DIODES

An analytic theory has been developed to calculate the rise of electro luminescence from bilayer light emitting diodes with internal energy b arriers for bath majority and minority carriers upon applying a rectan gular voltage pulse. Unless the mobility of the minority carriers-usua lly electrons, instead, is less than or equal to 2 x 10(-7) cm(2)/V s, onset of electroluminescence is governed by the growth of the interfa cial charge densities and the concomitant redistribution of the electr ic held inside the device rather than by charge carrier transport. The crucial system parameters turn out to be the energy barriers that con trol hole and electron injection. Good agreement with experiment is fo und. (C) 1998 American Institute of Physics. [S0021-8979(98)08116-X].