X-RAY CHARACTERIZATION OF BURIED ALLOTAXIALLY GROWN COSI2 LAYERS IN SI(100)

An x-ray study of the interface morphology and lattice parameters of b uried expitaxial CoSi2 layers in Si(100) is presented. Specular reflec tivity, diffuse and crystal truncation rod scattering, together with g razing incidence diffraction yield detailed information about the inte rface quality and lattice mismatch. It turns out that the CoSi2 interf aces are considerably smoothened by an annealing step at 1150 degrees C. Also the in-plane correlation length of the roughness increases yie lding laterally smoother interfaces. While the perpendicular lattice p arameter is between that of a free relaxed and a pseudomorphic structu re and a linear contraction as function of the annealing temperature i s obtained, grazing incidence diffraction reveals the opposite effect for the in-plane lattice mismatch. (C) 1998 American Institute of Phys ics. [S0021-8979(98)06711-5].