SPECTROSCOPIC ELLIPSOMETRIC STUDY OF THE SIZE EVOLUTION OF GE ISLANDSGROWN ON SI(100)

In this article we discuss the use of spectroscopic ellipsometry for a n in situ and real time probe of three-dimensional self-organized Ge i sland growth on Si (100) surfaces. We will show that atomic force micr oscopy and x-ray photoemission spectroscopy can be combined with spect roscopic ellipsometry to give information on the size and shape evolut ion of the Ge islands as well as on the amount of Ge deposited on the Si surface. (C) 1998 American Institute of Physics. [S0021-8979(98)025 11-0].