BAND OFFSETS AT THE INALGAAS INALAS(001) HETEROSTRUCTURES LATTICE-MATCHED TO AN INP SUBSTRATE/

Authors
ZHANG XH CHUA SJ XU SJ FAN WJ
Citation
Xh. Zhang et al., BAND OFFSETS AT THE INALGAAS INALAS(001) HETEROSTRUCTURES LATTICE-MATCHED TO AN INP SUBSTRATE/, Journal of applied physics, 83(11), 1998, pp. 5852-5854
Citations number
36
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
83
Issue
11
Year of publication
1998
Part
1
Pages
5852 - 5854
Database
ISI
SICI code
0021-8979(1998)83:11<5852:BOATII>2.0.ZU;2-I
Abstract
The first-principles pseudopotential method combined with virtual crys tal approximation is used to calculate band offsets at the In-0.53(Alz Ga1-z)(0.47)As/In0.52Al0.48As (001) heterostructures lattice matched t o an InP substrate. It is found that the valence-band offset (VBO) var ies with respect to the aluminum composition as VBO = 0.18- 0.16z-0.02 z(2) eV, while the conduction-band offset (CBO) varies as CBO = 0.51-0 .33z-0.18z(2) eV. Our results are in good agreement with the experimen tal data. (C) 1998 American Institute of Physics. [S0021-8979(98)06911 -4].