ELECTRON-MOBILITY IN IN0.5GA0.5P

Authors
Citation
Br. Nag et M. Das, ELECTRON-MOBILITY IN IN0.5GA0.5P, Journal of applied physics, 83(11), 1998, pp. 5862-5864
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
83
Issue
11
Year of publication
1998
Part
1
Pages
5862 - 5864
Database
ISI
SICI code
0021-8979(1998)83:11<5862:EII>2.0.ZU;2-N
Abstract
The Hall mobility of electrons is calculated for In0.5Ga0.5P by using the experimental values of the effective mass and the band gap, and th e estimated values of other constants. The experimental results are ex plained by taking the alloy scattering potential and the acoustic phon on deformation potential to be 0.435 and 12 eV, respectively. It is co ncluded that the experimental samples had impurity concentrations lyin g mostly between 5 and 15 times the electron concentration. (C) 1998 A merican Institute of Physics. [S0021-8979(98)05311-0].