MAGNETORESISTANCE, HALL-EFFECT, AND THERMOELECTRIC-POWER IN SPIN VALVES

Citation
H. Sato et al., MAGNETORESISTANCE, HALL-EFFECT, AND THERMOELECTRIC-POWER IN SPIN VALVES, Journal of applied physics, 83(11), 1998, pp. 5927-5932
Citations number
25
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
83
Issue
11
Year of publication
1998
Part
1
Pages
5927 - 5932
Database
ISI
SICI code
0021-8979(1998)83:11<5927:MHATIS>2.0.ZU;2-1
Abstract
Comparison of the magnetoresistance (MR) on two groups of spin-valve m ultilayers, NiO/NiFe/ Cu/NiFe/Cu/NiO and NiO/NiFe/Cu/NiFe/Cu, has been made in order to investigate the possibility of the enhanced specular scattering at NiO/metal interface. No clear difference in MR between the two systems has been found, suggesting that the enhancement of spe cular scattering at interfaces is not the origin of the large MR. For the held direction almost perpendicular to the plane, we found a sensi tive angular dependence of MR along with a large unidirectional anisot ropy. To sort out any specific characteristics of the spin-valve syste m compared to the multilayers, thermoelectric power and Hall effect ha ve been investigated for the first time. (C) 1998 American Institute o f Physics. [S0021-8979(98)07411-8].