FAR-INFRARED DIELECTRIC-CONSTANT OF POROUS SILICON LAYERS MEASURED BYTERAHERTZ TIME-DOMAIN SPECTROSCOPY

Authors
LABBELAVIGNE S BARRET S GARET F DUVILLARET L COUTAZ JL
Citation
S. Labbelavigne et al., FAR-INFRARED DIELECTRIC-CONSTANT OF POROUS SILICON LAYERS MEASURED BYTERAHERTZ TIME-DOMAIN SPECTROSCOPY, Journal of applied physics, 83(11), 1998, pp. 6007-6010
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
83
Issue
11
Year of publication
1998
Part
1
Pages
6007 - 6010
Database
ISI
SICI code
0021-8979(1998)83:11<6007:FDOPSL>2.0.ZU;2-4
Abstract
We measure the refractive index and the absorption of porous silicon l ayers in the millimetric and submillimetric wavelength range using the terahertz time-domain spectroscopy technique. For the studied range o f porosity (55%-76%), the refractive index of porous silicon is rather well described by mixture theories, in which the refractive index of bulk silicon enters as a main parameter. (C) 1998 American Institute o f Physics. [S0021-8979(98)07311-3].