PHOTOELECTROCHEMISTRY OF ZNO THIN-FILM ELECTRODE SENSITIZED BY AN OXOURANIUM (VI) COMPLEX IN AN ACETONITRILE PHOTOCELL

Citation
L. Bahadur et al., PHOTOELECTROCHEMISTRY OF ZNO THIN-FILM ELECTRODE SENSITIZED BY AN OXOURANIUM (VI) COMPLEX IN AN ACETONITRILE PHOTOCELL, Proceedings of the Indian Academy of Sciences. Chemical sciences, 105(4-5), 1993, pp. 235-243
Citations number
23
Categorie Soggetti
Chemistry
ISSN journal
02534134
Volume
105
Issue
4-5
Year of publication
1993
Pages
235 - 243
Database
ISI
SICI code
0253-4134(1993)105:4-5<235:POZTES>2.0.ZU;2-8
Abstract
The photosensitizing ability of tetraethylammonium bis-(isomaleonitril o) dioxouranate(VI), (Et4N)2[UO2(i-MNT)2], studied at the n-ZnO/aceton itrile interface, is shown by the enhancement observed in photocurrent with (Et4N)2[UO2(i-MNT)2] in comparison to that obtained without the sensitizer. The flat-band potential is -0.40 V vs SSCE. (Et4N)2[UO2(i- MNT)2] acts as an acceptor-type sensitizer as concluded from the energ y-level diagram constructed using its redox potential coupled with its excitation energy and the flat-band potential of ZnO electrode. Long- term stability of the photocurrent under continuous illumination of th e electrode is also studied.