CAPTURE CROSS-SECTIONS OF ELECTRON-IRRADIATION-INDUCED DEFECTS IN 6H-SIC

An investigation of electron irradiation induced deep levels in 6H-SiC p(+)n diodes grown by chemical vapor deposition has been performed. D eep level transient spectroscopy (DLTS) reveals several overlapping pe aks in the temperature range 140-650 It. The electron capture cross se ctions have been measured by directly observing the variation of the D LTS peak height with the duration of the filling pulse and fitting the capacitance transient using multiple linear regression. Temperature d ependence studies of the electron capture cross section were performed on three of the observed levels. (C) 1998 American Institute of Physi cs. [S0021-8979(98)06014-9]