DEVICE MODEL INVESTIGATION OF SINGLE-LAYER ORGANIC LIGHT-EMITTING-DIODES

Citation
Bk. Crone et al., DEVICE MODEL INVESTIGATION OF SINGLE-LAYER ORGANIC LIGHT-EMITTING-DIODES, Journal of applied physics, 84(2), 1998, pp. 833-842
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
84
Issue
2
Year of publication
1998
Pages
833 - 842
Database
ISI
SICI code
0021-8979(1998)84:2<833:DMIOSO>2.0.ZU;2-O
Abstract
We present calculations of single layer organic light emitting diode ( LED) characteristics using a device model which includes charge inject ion, transport, recombination, and space charge effects in the organic material. Contact limited and ohmic contacts, high and low carrier mo bilities, and device thicknesses from 5 to 200 nm are considered. The scaling of device current with applied voltage bias and organic film t hickness is described for contact limited and ohmic contacts. Calculat ed device current, light output, and quantum and power efficiency are presented for representative cases of material and device parameters. These results are interpreted using the calculated spatial variation o f the electric field, charge density, and recombination rate density i n the devices. We find that efficient single layer organic LEDs are po ssible for a wide range of organic material and contact parameters. (C ) 1998 American Institute of Physics. [S0021-8979(98)03814-6]