PORE FORMATION ON THE SILICON-METAL INTERFACE IN SILICON-ON-INSULATORSTRUCTURES

Pore formation is considered on the interface between a metal film and upper silicon layer in silicon-on-insulator (SOI) structures under hi gh temperature conditions. It is assumed that the interface transmits silicon self-interstitials and collects vacancies, which results in th e vacancy-related defect formation. The role of the buried insulator a s a diffusion barrier for point defects is discussed. It is shown that vacancy pileup on the metal-silicon layer interface depends on the de formation introduced in the silicon layer by both the metal film and b uried insulator. A metallization technique based on multicomponent amo rphous metal films is shown to produce long-life SOI-based devices. (C ) 1998 American Institute of Physics.