SEMIINSULATING GAAS AS A RELAXATION SEMICONDUCTOR

It is shown that semi-insulating GaAs diodes exhibit all the qualitati ve electrical properties expected from a relaxation semiconductor. The degree of ideality increases after irradiation by neutrons for liquid encapsulated Czochralski and liquid phase epitaxy (LPE) material alth ough LPE material is almost lifetimelike directly from manufacture. Ex perimental results are shown for current-voltage and capacitance-volta ge frequency over a range of temperatures for samples in the low- and high-space charge limit conditions. The implications for commercial Ga As and other compound semiconductor devices are discussed. (C) 1998 Am erican Institute of Physics.