FREQUENCY-RESOLVED MICROWAVE REFLECTION PHOTOCONDUCTANCE

The effect of the carrier recombination process in silicon on the micr owave reflection coefficient is analyzed in the frequency domain. The process is described using a two level recombination/ trapping model. Carrier recombination kinetics are characterized by four parameters, t wo of which are related to the recombination and the other to the trap ping processes. These parameters are evaluated for Czochralski silicon wafers based on Nyquist plots. In the evaluation procedure, a nonline ar simplex method is used for fitting the experimental data to the mod el. (C) 1998 American Institute of Physics.