The effect of the carrier recombination process in silicon on the micr
owave reflection coefficient is analyzed in the frequency domain. The
process is described using a two level recombination/ trapping model.
Carrier recombination kinetics are characterized by four parameters, t
wo of which are related to the recombination and the other to the trap
ping processes. These parameters are evaluated for Czochralski silicon
wafers based on Nyquist plots. In the evaluation procedure, a nonline
ar simplex method is used for fitting the experimental data to the mod
el. (C) 1998 American Institute of Physics.