BLACKBODY EMISSION UNDER LASER EXCITATION OF SILICON NANOPOWDER PRODUCED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

Citation
J. Costa et al., BLACKBODY EMISSION UNDER LASER EXCITATION OF SILICON NANOPOWDER PRODUCED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 83(12), 1998, pp. 7879-7885
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
83
Issue
12
Year of publication
1998
Pages
7879 - 7885
Database
ISI
SICI code
0021-8979(1998)83:12<7879:BEULEO>2.0.ZU;2-G
Abstract
Previous results concerning radiative emission under laser irradiation of silicon nanopowder are reinterpreted in terms of thermal emission. A model is developed that considers the particles in the powder as in dependent, so under vacuum the only dissipation mechanism is thermal r adiation. The supralinear dependence observed between the intensity of the emitted radiation and laser power is predicted by the model, as i s the exponential quenching when the gas pressure around the sample in creases. The analysis allows us to determine the sample temperature. T he local heating of the sample has been assessed independently by the position of the transverse optical Raman mode. Finally, it is suggeste d that the photoluminescence observed in porous silicon and similar ma terials could, in some cases, be blackbody radiation. (C) 1998 America n Institute of Physics.