PHOTOLUMINESCENCE INVESTIGATION OF GAINP GAAS MULTIPLE-QUANTUM WELLS GROWN ON (001) AND (311) B GAAS-SURFACES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/

Photoluminescence (PL) investigation was carried out on GaInP/GaAs mul tiple quantum wells structures grown on (001) and (311) B surfaces of GaAs by gas source molecular beam epitaxy. Superlattice structures of GaAs/GaInP grown on (001) GaAs substrate were also studied in comparis on. Deep-level luminescence was seen to dominate the PL spectra from t he quantum wells and superlattice structures that were grown on (001) GaAs substrate. In contrast, superior optical properties were exhibite d in the same structures grown on (311) B GaAs surfaces. The results s uggested that GaAs/GaInP quantum well structures on (311) B oriented s ubstrates could efficiently suppress the deep-level emissions, result in narrower PL peaks indicating smooth interfaces. (C) 1998 American I nstitute of Physics.