AIN AS AN ENCAPSULATE FOR ANNEALING SIC

AlN films grown by either organometallic vapor phase epitaxy (OMVPE) o r pulsed laser deposition (PLD) can be used to encapsulate SiC when he ated in an argon atmosphere at temperatures at least as high as 1600 d egrees C for times at least as long as 30 min. The coverage of the AlN remains complete and the AlN/SiC interface remains abrupt as determin ed by Auger electron spectroscopy. However, considerable atomic moveme nt occurs in the AlN at 1600 degrees C, and holes can form in it as th e film agglomerates if there are large variations in the film thicknes s. Also, the SiC polytype near the surface can in some instances be ch anged possibly by the stress generated by the epitaxial AlN film. Usin g x-ray diffraction measurements, we also found that, during the 1600 degrees C anneal, grains with nonbasal plane orientations tended to gr ow at the expense of those with basal plane orientations in the OMVPE films, whereas grains with only the basal plane orientation tended to grow in the PLD films. However, there is no indication that the type o f grain growth that is dominant affects the film's ability to act as a n encapsulate. (C) 1998 American Institute of Physics.