EFFECTS OF SPACER LAYERS ON THE WIGNER FUNCTION SIMULATION OF RESONANT-TUNNELING DIODES

The effects of spacer layer width and asymmetry on the simulation of q uantum transport in resonant tunneling diodes are studied. The results show that these layers significantly influence the I-V characteristic , which presents important differences under direct or reverse bias po larity in devices with asymmetric spacer layers. These differences are interpreted in terms of potential profile comparisons of the simulate d structures and are in qualitative agreement with experimental data. (C) 1998 American Institute of Physics.