EFFECT OF SUBSTRATE-TEMPERATURE ON SI COMPENSATION IN DELTA-DOPED INSB AND ALXIN1-XSB GROWN BY MOLECULAR-BEAM EPITAXY

Dopant compensation was studied for Si delta-doped InSb samples grown on GaAs (001) substrates. Hall-effect measurements indicate a sharp de cline in electron density with increased substrate temperature when do ping and cap-layer growth occur on the pseudo-(1x3) surface reconstruc tion, while little temperature dependence is observed for doping and g rowth on the c(4x4) surface reconstruction. Hall-effect measurements o n samples grown with the substrate temperature differing between the d opant and cap layers rule out simple diffusion and desorption of Si at oms, and, along with secondary-ion mass spectrometry measurements, sug gest that the temperature dependence of the carrier density results fr om compensation occurring primarily during growth of the cap layer. Si milar behavior was observed in AlxIn1-xSb samples delta-doped with Si. (C) 1998 American Institute of Physics.