EFFECT OF GROWTH TEMPERATURE AND SUBSTRATE MATERIALS ON EPITAXIAL-GROWTH OF CORONENE

Citation
Ka. Cho et al., EFFECT OF GROWTH TEMPERATURE AND SUBSTRATE MATERIALS ON EPITAXIAL-GROWTH OF CORONENE, Journal of applied physics, 84(1), 1998, pp. 268-274
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
84
Issue
1
Year of publication
1998
Pages
268 - 274
Database
ISI
SICI code
0021-8979(1998)84:1<268:EOGTAS>2.0.ZU;2-3
Abstract
Epitaxial growth of coronene (C24H12) was studied on substrates having no dangling bonds, such as hydrogen-terminated Si(lll), MoS2, MoTe2, and muscovite by using reflection high-energy electron diffraction. It was found that the sticking coefficient and the maximum thickness of the epitaxial films are strongly dependent on the substrate materials as well as on the growth temperature. The effectiveness of molecular m echanics calculation was examined by comparing the calculated stabiliz ation energies with the experimental results. Importance of the electr onic structure of substrates has been revealed and its effect was esti mated quantitatively using the Lifshitz theory. The tendency that the interfacial dispersion force is stronger for smaller band gap material s has been shown from theoretical consideration. (C) 1998 American Ins titute of Physics.